TSHA6502

Infrared Emitters 5V 24mW 875nm 24 Deg

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SeekIC No. : 0019460 Detail

TSHA6502: Infrared Emitters 5V 24mW 875nm 24 Deg

floor Price/Ceiling Price

Part Number:
TSHA6502
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2025/1/11

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Product Details

Quick Details

Wavelength : 875 nm Radiant Intensity : 360 mW/sr
Maximum Operating Temperature : + 100 C Minimum Operating Temperature : - 55 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Packaging : Bulk
Package / Case : T-1 3/4
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 875 nm
Radiant Intensity : 360 mW/sr


Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC





Application

• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass






Specifications

PARAMETER TEST CONDITION
SYMBOL
VALUE
UNIT
Junction temperature
Tj
100
Operating temperature range
Tamb
- 40 to + 85
Storage temperature range
Tstg
- 40 to + 100
Soldering temperature t 5 s, 2 mm from case
Tsd
260
Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W





Description

The TSHA6502 series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package






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