TSHA4401

Beam Angle :
Package / Case : T-1
Packaging : Bulk
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 875 nm
Radiant Intensity : 360 mW/sr


Features:

• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 20°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Infrared remote control and free air data transmission systems with comfortable radiation angle

• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
Reverse voltage		VR	5	V
Forward current		IF	100	mA
Peak forward current	tp/T = 0.5, tp = 100 s	IFM	200	mA
Surge forward current	tp = 100 s	IFSM	2	A
Power dissipation		PV	180	mW
Junction temperature		Tj	100
Operating temperature range		Tamb	- 40 to + 85
Storage temperature range		Tstg	- 40 to + 100
Soldering temperature	t 5 s, 2 mm from case	Tsd	260
Thermal resistance junction/ambient	J-STD-051, leads 7 mm, soldered on PCB	RthJA	300	mA

Note
T_amb = 25 °C, unless otherwise specified




Description

Infrared Emitting Diode,RoHS Compliant, 875 nm, GaAlAs, TSHA4401

The TSHA4401 series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.