Features: ` Extra high radiant power` High radiant intensity for long transmission distance` Suitable for high pulse current operation` Standard T1(ø 3 mm) package for low space application` Angle of half intensity = ± 20°` Peak wavelength p = 875 nm` High reliability` Good spectral matchin...
TSHA440: Features: ` Extra high radiant power` High radiant intensity for long transmission distance` Suitable for high pulse current operation` Standard T1(ø 3 mm) package for low space application` ...
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` Extra high radiant power
` High radiant intensity for long transmission distance
` Suitable for high pulse current operation
` Standard T1(ø 3 mm) package for low space application
` Angle of half intensity = ± 20°
` Peak wavelength p = 875 nm
` High reliability
` Good spectral matching to Si photodetectors
Infrared remote control and free air transmission systems with high power requirements in combination with PIN photodiodes or phototransistors.
Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse Voltage | VR | 5 | V | |
Forward Current | IF | 100 | mA | |
Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
Surge Forward Current | tp = 100 s | IFSM | 2 | A |
Power Dissipation | PV | 180 | mW | |
Junction Temperature | Tj | 100 | ||
Operating Temperature Range | Tamb | -55.+100 | ||
Storage Temperature Range | Tstg | -55.+100 | ||
Soldering Temperature | t 5sec, 2 mm from case | Tsd | 260 | |
Thermal Resistance Junction/Ambient | RthJA | 450 | K/W |
The TSHA440 series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 % radiant power improvement.