TSHA650

Features: ` Extra high radiant power` Suitable for high pulse current operation` Standard T13/4 (ø 5 mm) package` Leads formed without standoff` Angle of half intensity = ± 24°` Peak wavelength p = 875 nm` High reliability` Good spectral matching to Si photodetectorsApplicationInfrared remo...

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SeekIC No. : 004529488 Detail

TSHA650: Features: ` Extra high radiant power` Suitable for high pulse current operation` Standard T13/4 (ø 5 mm) package` Leads formed without standoff` Angle of half intensity = ± 24°` Peak waveleng...

floor Price/Ceiling Price

Part Number:
TSHA650
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

` Extra high radiant power
` Suitable for high pulse current operation
` Standard T13/4 (ø 5 mm) package
` Leads formed without standoff
` Angle of half intensity = ± 24°
` Peak wavelength p = 875 nm
` High reliability
` Good spectral matching to Si photodetectors



Application

Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.

Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100s IFM 200 mA
Surge Forward Current tp100s IFSM 200 A
Power Dissipation   PV 2.5 mW
Junction Temperature   Tj 210
Operating Temperature Range   Tamb 55...+85
Storage Temperature Range   Tstg 55...+100
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient   RthJA 350 K/W



Description

The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.

In contrast to the TSHA650 series lead standoffs are omitted.




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