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TSHA5501: Infrared Emitters 5V 23mW 875nm 24 Deg

TSHA5501 Data Sheet

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Part Number:: TSHA5501
Mfg:: Vishay Semiconductors
Supply Ability:: 5000

Price Break

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2025/1/11

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Recent History
What is this?

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Features: ` Extra high radiant power` High radiant intensity for long transmission distance` Suita...
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US $.17 - .32 / Piece

Infrared Emitters 5V 20mW 875nm 20 Deg
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US $.13 - .17 / Piece

Infrared Emitters 5V 24mW 875nm 20 Deg

Product Details

Quick Details

Wavelength :	875 nm	Radiant Intensity :	300 mW/sr
Maximum Operating Temperature :	+ 100 C	Minimum Operating Temperature :	- 55 C
Package / Case :	T-1 3/4	Packaging :	Bulk

Description

Beam Angle :
Packaging : Bulk
Package / Case : T-1 3/4
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 55 C
Wavelength : 875 nm
Radiant Intensity : 300 mW/sr

Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: p = 875 nm
• High reliability
• Angle of half intensity: = ± 24°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC

Application

• Infrared remote control and free air data transmission systems with comfortable radiation angle
• This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass

Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
Junction temperature		T_j	100
Operating temperature range		T_amb	- 40 to + 85
Storage temperature range		T_stg	- 40 to + 100
Soldering temperature	t 5 s, 2 mm from case	T_sd	260
Thermal resistance junction/ambient	J-STD-051, leads 7 mm, soldered on PCB	R_thJA	230	K/W

Description

Infrared Emitting Diode,RoHS Compliant, 875 nm, GaAlAs, TSHA5501

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TSHA5501

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