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TSHA550

Features: ` Extra high radiant power` Suitable for high pulse current operation` Standard T13/4 (ø 5 mm) package`Angle of half intensity = ± 24` Peak wavelengthp = 875 nm` High reliability` Good spectral matching to Si photodetectorsApplicationInfrared remote control and free air transmis...

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SeekIC No. : 004529486 Detail

TSHA550: Features: ` Extra high radiant power` Suitable for high pulse current operation` Standard T13/4 (ø 5 mm) package`Angle of half intensity = ± 24` Peak wavelengthp = 875 nm` High reliability`...

TSHA550 Data Sheet

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Part Number:
TSHA550
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

` Extra high radiant power
` Suitable for high pulse current operation
` Standard T13/4 (ø 5 mm) package
`Angle of half intensity   = ± 24
` Peak wavelength  p = 875 nm
` High reliability
` Good spectral matching to Si photodetectors



Application

Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.

Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100 s IFM 200 mA
Surge Forward Current tp = 100 s IFSM 2.5 A
Power Dissipation   PV 210 mW
Junction Temperature   Tj 100
Operating Temperature Range   Tamb -55.+100
Storage Temperature Range   Tstg -55.+100
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient   RthJA 350 K/W



Description

The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.

 




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