Features: Two AGC amplifiers in a single package Integrated gate protection diodes Low noise figure High gain, very high forward transadmittance (40 mS typ.) Biasing network on chip Improved cross modulation at gain reduction High AGC-range with less steep slope SMD package, reverse pinning possib...
TSDF54040X: Features: Two AGC amplifiers in a single package Integrated gate protection diodes Low noise figure High gain, very high forward transadmittance (40 mS typ.) Biasing network on chip Improved cross m...
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Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two diff...
Parameter | Test Conditions |
Symbol |
Value |
Unit |
Drain - source voltage |
VDS |
8 |
V | |
Drain current |
ID |
30 |
mA | |
Gate 1/Gate 2 - source peak current |
±IG1/G2SM |
10 |
mA | |
Gate 1/Gate 2 - source voltage |
±VG1/G2SM |
6 |
V | |
Total power dissipation | Tamb 60 °C |
Ptot |
200 |
mW |
Channel temperature |
TCh |
150 |
||
Storage temperature range |
Tstg |
55 to +150 |