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TSDF02830YR

Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two differently optimized amplifiers in a single package• Integrated gate protection diodes• Low noise figure, high gain• Typical forward transadmittance of 31 mS resp 28 mS• Partly in...

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TSDF02830YR: Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two differently optimized amplifiers in a single package• Integrated gate protection diodes• Low...

TSDF02830YR Data Sheet

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Part Number:
TSDF02830YR
Supply Ability:
5000

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Upload time: 2025/1/11

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Product Details

Description



Features:

• Easy Gate 1 switch-off with PNP switching transistors inside PLL
• Two differently optimized amplifiers in a single package
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS resp 28 mS
• Partly internal self biasing-network on chip
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V
• Supply voltage 5 V (3 V to 7 V)
• SMD package, reverse pinning


Application

Low noise gain controlled VHF and UHF input stages, such as in digital and analog TV tuners.


Specifications

Parameter Test condition Symbol Value Unit
Drain - source voltage   VDS 8 v
Drain current   ID 25 mA
Gate 1/Gate 2 - source peak
current		   ±IG1/G2SM 10 mA
Gate 1/Gate 2 - source voltage   + VG1± VG2SM 6 V
Gate 1 - source voltage   - VG1SM 1.5 V
Total power dissipation Tamb 60 °C Ptot 200 mW
Channel temperature   TCh 150 °C
Storage temperature range   Tstg - 55 to + 150  
Channel ambient on glass fibre printed board (25 x20 x 1.5) mm3 plated with 35 µm Cu RthChA 450 °C



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