Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching transistors inside PLL· Integrated gate protection diodes· Low noise figure· High gain, medium forward transadmittance (24 mS typ.)· Biasing network on chip· Improved cross modulation at gain reduction· H...
TSDF02424X: Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching transistors inside PLL· Integrated gate protection diodes· Low noise figure· High gain, medium forward t...
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Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two diff...
Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Parameter | Test condition | Symbol | Value | Unit |
Drain - source voltage | VDS | 8 | v | |
Drain current | ID | 25 | mA | |
Gate 1/Gate 2 - source peak current |
± IG1/G2SM | 10 | mA | |
Gate 1/Gate 2 - source voltage | + VG1± VG2SM | 6 | V | |
Gate 1 - source voltage | - VG1SM | 1.5 | V | |
Total power dissipation | Tamb 60 °C | Ptot | 200 | mW |
Channel temperature | TCh | 150 | °C | |
Storage temperature range | Tstg | - 55 to + 150 | °C |