Features: · Two AGC amplifiers in a single package· Integrated gate protection diodes· Low noise figure· High gain, high forward transadmittance (40 mS typ.)· Biasing network on chip· Improved cross modulation at gain reduction· High AGC-range· SMD packageApplicationLow noise gain controlled input...
TSDF54040: Features: · Two AGC amplifiers in a single package· Integrated gate protection diodes· Low noise figure· High gain, high forward transadmittance (40 mS typ.)· Biasing network on chip· Improved cross...
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Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two diff...
Parameter | Test condition | Symbol | Value | Unit |
Drain - source voltage | VDS | 8 | V | |
Drain current | ID | 30 | mA | |
Gate 1/Gate 2 - source peak current |
± IG1/G2SM | 10 | mA | |
Gate 1/Gate 2 - source voltage | + VG1± VG2SM | 6 | V | |
Gate 1 - source voltage | - VG1SM | 1.5 | V | |
Total power dissipation | Tamb 60 °C | Ptot | 200 | mW |
Channel temperature | TCh | 150 | °C | |
Storage temperature range | Tstg | - 55 to + 150 | °C |