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TSDF52830YS

Features: • Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC• Internal switch for saving lines on P...

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TSDF52830YS: Features: • Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 s...

TSDF52830YS Data Sheet

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Part Number:
TSDF52830YS
Supply Ability:
5000

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Product Details

Description



Features:

• Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC
• Internal switch for saving lines on PCB layout as well as external components
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS resp. 28 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V


Application

Low noise gain controlled VHF and UHF input stages with 5 V supply voltage, such as in digital and analog TV tuners and in other multimedia and communications equipment.




Pinout

Connection Diagram


Specifications

Tamb = 25 , unless otherwise specified

Amplifier 1
Following data are valid for operating amplifier 1 (pin 1, 3, 5, 2) which is optimized for UHF applications
Parameter Test condition Symbol Value Unit
Drain - source voltage   VDS 8 V
Drain current   ID 25 mA
Gate 1/Gate 2 - source peak current   ±IG1/G2SM 10 mA
Gate 1/Gate 2 - source voltage   + VG1± VG2SM 6 V
Gate 1 - source voltage   - VG1SM 1.5 V
Total power dissipation Tamb 60 Ptot 200 mW
Channel temperature   TCh 100
Storage temperature range   Tstg - 55 to + 150

Amplifier 2
Following data are valid for operating amplifier 2 (pin 6, 4, 5, 2) which is optimized for VHF applications
Parameter Test condition Symbol Value Unit
Drain - source voltage   VDS 8 V
Drain current   ID 30 mA
Gate 1/Gate 2 - source peak current   ±IG1/G2SM 10 mA
Gate 1/Gate 2 - source voltage   + VG1± VG2SM 6 V
Gate 1 - source voltage   - VG1SM 1.5 V
Total power dissipation Tamb 60 Ptot 200 mW
Channel temperature   TCh 100
Storage temperature range   Tstg - 55 to + 150



Description

The Dual-MOSMIC® TSDF52830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range. The TSDF52830YS is operated by the Gate 1 bias of the UHF amplifier on Pin 1. All of the Gates are protected against excessive input voltage surges by integrated antiserial diodes between themselves and Source.




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