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TSDF2020W

Features: · Very low noise figure· Very high power gain· High transition frequency fT = 25 GHz· Low feedback capacitance· Emitter pins are thermal leadsApplicationFor RF frontends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV...

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SeekIC No. : 004529378 Detail

TSDF2020W: Features: · Very low noise figure· Very high power gain· High transition frequency fT = 25 GHz· Low feedback capacitance· Emitter pins are thermal leadsApplicationFor RF frontends, low noise, and wi...

TSDF2020W Data Sheet

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Part Number:
TSDF2020W
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Very low noise figure
· Very high power gain
· High transition frequency fT = 25 GHz
· Low feedback capacitance
· Emitter pins are thermal leads


Application

For RF frontends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors.




Specifications

Parameter Test condition Symbol Value Unit
Collector-base voltage   VDS 10 V
Collector-emitter voltage   ID 3.5 V
Emitter-base voltage   ± IG1/G2SM 1.5 V
Collector current   + VG1± VG2SM 40 mA
Total power dissipation Tamb 60 °C Ptot 200 mW
Channel temperature   TCh 150 °C
Storage temperature range   Tstg - 65 to + 150 °C
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu		 RthChA 450 K/W



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