Features: · Very low noise figure· Very high power gain· High transition frequency fT = 25 GHz· Low feedback capacitance· Emitter pins are thermal leadsApplicationFor low current, lownoise applications, such as in RF frontends, in analogue and digital cellular and cordless phones,in analogue and d...
TSDF2005W: Features: · Very low noise figure· Very high power gain· High transition frequency fT = 25 GHz· Low feedback capacitance· Emitter pins are thermal leadsApplicationFor low current, lownoise applicati...
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Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two diff...
For low current, lownoise applications, such as in RF frontends, in analogue and digital cellular and cordless phones,in analogue and digital TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors.
Parameter | Test condition | Symbol | Value | Unit |
Collector-base voltage | VDS | 10 | V | |
Collector-emitter voltage | ID | 3.5 | V | |
Emitter-base voltage | ± IG1/G2SM | 1.5 | V | |
Collector current | + VG1± VG2SM | 12 | mA | |
Total power dissipation | Tamb 132 °C | Ptot | 40 | mW |
Channel temperature | TCh | 150 | °C | |
Storage temperature range | Tstg | - 65 to + 150 | °C | |
Junction ambient | on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu |
RthChA | 450 | K/W |