TSDF1920W

Features: · Very low noise figure· Very high power gain· High transition frequency fT = 24 GHz· Low feedback capacitance·Emitter pins are thermal leadsApplicationFor RF frontends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV ...

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SeekIC No. : 004529376 Detail

TSDF1920W: Features: · Very low noise figure· Very high power gain· High transition frequency fT = 24 GHz· Low feedback capacitance·Emitter pins are thermal leadsApplicationFor RF frontends, low noise, and wid...

floor Price/Ceiling Price

Part Number:
TSDF1920W
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

· Very low noise figure
· Very high power gain
· High transition frequency fT = 24 GHz
· Low feedback capacitance
·Emitter pins are thermal leads



Application

For RF frontends, low noise, and wideband applications, such as in analogue and digital cellular and cordless phones (DECT, PHD), in TV systems (e.g. satellite tuners), in high frequency oscillators up to 12 GHz, in pagers and radar detectors.

 




Specifications

Parameter Test condition Symbol Value Unit
Collector-base voltage   VCBO 10 V
Collector-emitter voltage   VCEO 3.5 V
Emitter-base voltage   VEBO 1.5 V
Collector current   IC 40 mA
Total power dissipation Tamb 60 °C Ptot 200 mW
Channel temperature   TCh 150 °C
Storage temperature range   Tstg - 65 to + 150 °C
Junction ambient on glass fibre printed board
(25 x 20 x 1.5) mm3 plated with 35 mm Cu
RthChA 450 K/W

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