TSDF12830YS

• Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC
• Internal switch for saving lines on PCB layout as well as external components
• Integrated gate protection diodes
• Low noise figure, high gain
• Typical forward transadmittance of 31 mS resp. 28 mS
• Superior cross modulation at gain reduction
• High AGC-range with soft slope
• Main AGC control range from 3 V to 0.5 V

Low noise gain controlled VHF and UHF input stages with 5 V supply voltage, such as in digital and analog TV tuners and in other multimedia and communications equipment.

The Dual-MOSMIC® TSDF12830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range. The integrated switch is operated by the Gate 1 bias of the UHF amplifier on Pin 6. All of the Gates of TSDF12830YS are protected against excessive input voltage surges by integrated antiserial diodes between themselves and Source.