Features: · Low power applications· Very low noise figure· High transition frequency fT = 12 GHzApplicationFor low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.Specifications Parame...
TSDF1205R: Features: · Low power applications· Very low noise figure· High transition frequency fT = 12 GHzApplicationFor low noise and small signal low power amplifiers. This transistor has superior noise fig...
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Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: · Two AGC amplifiers in a single package· Easy Gate 1 switch-off with PNP switching tran...
Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• Two diff...
For low noise and small signal low power amplifiers.
This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Parameter | Test Conditions | Symbol | Limit | Unit |
Collector-Base Voltage | VCBO | 9 | V | |
Collector-Emitter Voltage | VCEO | 4 | V | |
Emitter-Base Voltage | VEBO | 2 | V | |
Collector Current | IC | 12 | mA | |
Total power dissipation |
Tamb 132 | Ptot |
40 | mW |
Junction temperature | Tj | 150 | ||
Storage temperature range | Tstg | - 65 to +150 |