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TQ9147B

Features: High Efficiency+32 dBm Output Power50W Matched InputSO-16 Plastic PackageMonolithic Power AmpApplicationAMPS Mobile PhonesCDPD ModemsGeneral ISM Band ApplicationsPinoutSpecifications Parameter Value Units DC Power Supply 1 8.0 V DC Gate Voltage -5.0 V RF I...

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SeekIC No. : 004527869 Detail

TQ9147B: Features: High Efficiency+32 dBm Output Power50W Matched InputSO-16 Plastic PackageMonolithic Power AmpApplicationAMPS Mobile PhonesCDPD ModemsGeneral ISM Band ApplicationsPinoutSpecifications ...

TQ9147B Data Sheet

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Part Number:
TQ9147B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

 High Efficiency
 +32 dBm Output Power
 50W Matched Input
 SO-16 Plastic Package
 Monolithic Power Amp


Application

 AMPS Mobile Phones
 CDPD Modems
 General ISM Band Applications


Pinout

Connection Diagram


Specifications

Parameter
Value
Units
DC Power Supply 1
8.0
V
DC Gate Voltage
-5.0
V
RF Input Power
20
dBm
Storage Temperature
-55 to 150
° C
Operating Temperature (case)
-40 to 110
° C



Description

The TQ9147B is a high efficiency two stage GaAs MESFET power amplifier IC intended for use in AMPS (IS-19) applications that operate in the US Cellular (824 - 849 MHz) band. The TQ9147B requires minimal external RF circuitry and operates from a 4.8-Volt supply. With its flexible, off-chip, single component output matching circuit, the TQ9147B is suitable for use in other applications near the cellular band, such as 900 MHz ISM applications.

The TQ9147B utilizes a space saving SO-16 plastic package that minimizes board area and cost. 




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