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TPS1120Y

Features: Low rDS(on) . . . 0.18 at VGS = 10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015PinoutSpecifications UNIT Drain-to-source voltage, VDS 15 V Gate-to-source voltage, VGS ...

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SeekIC No. : 004526471 Detail

TPS1120Y: Features: Low rDS(on) . . . 0.18 at VGS = 10 V3-V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxESD Protection Up to 2 kV per MIL-STD-883C, Method 3015PinoutSpe...

TPS1120Y Data Sheet

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Part Number:
TPS1120Y
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 Low rDS(on) . . . 0.18 at VGS = 10 V
 3-V Compatible
 Requires No External VCC
 TTL and CMOS Compatible Inputs
 VGS(th) = 1.5 V Max
 ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015


Pinout

Connection Diagram


Specifications

 
UNIT
Drain-to-source voltage, VDS
15
V
Gate-to-source voltage, VGS
2 or 15
V
Continuous drain current each device (TJ = 150°C) ID
current, C),		 VGS = 2.7 V
TA = 25°C
±0.39
A
TA = 125°C
±0.21
VGS = 3 V
TA = 25°C
±0.5
TA = 125°C
±0.25
VGS = 4.5 V
TA = 25°C
±0.74
TA = 125°C
±0.34
VGS = 10 V
TA = 25°C
±1.17
TA = 125°C
±0.53
Pulse drain current, ID
TA = 25°C
±7
A
Continuous source current (diode conduction), IS
TA = 25°C
1
A
Continuous total power dissipation See Dissipation Rating Table
Storage temperature range, Tstg
55 to 150
°C
Operating junction temperature range, TJ
40 to 150
°C
Operating free-air temperature range, TA
40 to 125
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C



Description

The TPS1120Y incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSE process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 mA, the TPS1120Y is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120Y includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages.

The TPS1120Y is characterized for an operating junction temperature range, TJ, from 40°C to 150°C.




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