TPS1100D

MOSFET MOSFET 10ns RT

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TPS1100D Picture
SeekIC No. : 00149570 Detail

TPS1100D: MOSFET MOSFET 10ns RT

floor Price/Ceiling Price

US $ .67~.98 / Piece | Get Latest Price
Part Number:
TPS1100D
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.81
  • $.71
  • $.67
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 15 V
Gate-Source Breakdown Voltage : - 15 V Continuous Drain Current : +/- 1.6 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Resistance Drain-Source RDS (on) : 0.18 Ohms
Drain-Source Breakdown Voltage : - 15 V
Gate-Source Breakdown Voltage : - 15 V
Continuous Drain Current : +/- 1.6 A


Parameters:

Technical/Catalog InformationTPS1100D
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max791mW
PackagingTube
Gate Charge (Qg) @ Vgs5.45nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1100D
TPS1100D
296 3379 5 ND
29633795ND
296-3379-5



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