TPS1120DRG4

MOSFET Dual P-Ch Enh-Mode MOSFET

product image

TPS1120DRG4 Picture
SeekIC No. : 00156881 Detail

TPS1120DRG4: MOSFET Dual P-Ch Enh-Mode MOSFET

floor Price/Ceiling Price

US $ .54~.59 / Piece | Get Latest Price
Part Number:
TPS1120DRG4
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~1790
  • 1790~2000
  • 2000~2500
  • 2500~5000
  • Unit Price
  • $.59
  • $.56
  • $.56
  • $.54
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/1

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 15 V, 2 V Continuous Drain Current : 1.17 A
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V Configuration : Dual Dual Drain
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V
Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 15 V, 2 V
Continuous Drain Current : 1.17 A


Parameters:

Technical/Catalog InformationTPS1120DRG4
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C1.17A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max840mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs5.45nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1120DRG4
TPS1120DRG4



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Crystals and Oscillators
Integrated Circuits (ICs)
Semiconductor Modules
Circuit Protection
Prototyping Products
DE1
Fans, Thermal Management
View more