MOSFET Dual P-Ch Enh-Mode MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 15 V | ||
Gate-Source Breakdown Voltage : | - 15 V, 2 V | Continuous Drain Current : | 1.17 A | ||
Resistance Drain-Source RDS (on) : | 400 mOhms at 4.5 V | Configuration : | Dual Dual Drain | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Reel |
Technical/Catalog Information | TPS1120DRG4 |
Vendor | Texas Instruments |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 P-Channel (Dual) |
Drain to Source Voltage (Vdss) | 15V |
Current - Continuous Drain (Id) @ 25° C | 1.17A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 840mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Drawing Number | 296; 4040047-2; D; 8 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPS1120DRG4 TPS1120DRG4 |