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TPS1120DG4

MOSFET Dual P-Ch Enh-Mode MOSFET

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SeekIC No. : 00152399 Detail

TPS1120DG4: MOSFET Dual P-Ch Enh-Mode MOSFET

TPS1120DG4 Data Sheet

floor Price/Ceiling Price

US $ .79~1.29 / Piece | Get Latest Price
Part Number:
TPS1120DG4
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.29
  • $1.08
  • $.93
  • $.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : + 2 V, - 15 V Continuous Drain Current : - 2.7 V
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Configuration : Dual Dual Drain
Resistance Drain-Source RDS (on) : 0.18 Ohms
Drain-Source Breakdown Voltage : 15 V
Continuous Drain Current : - 2.7 V
Gate-Source Breakdown Voltage : + 2 V, - 15 V


Parameters:

Technical/Catalog InformationTPS1120DG4
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C1.17A
Rds On (Max) @ Id, Vgs180 mOhm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max840mW
PackagingTube
Gate Charge (Qg) @ Vgs5.45nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1120DG4
TPS1120DG4



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