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TPS1101Y

Features: Low rDS(on) . . . 0.09 Typ at VGS = 10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015PinoutSpecifications UNIT Drain-to-source voltage, V...

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TPS1101Y: Features: Low rDS(on) . . . 0.09 Typ at VGS = 10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th) = 1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up t...

TPS1101Y Data Sheet

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Part Number:
TPS1101Y
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

 Low rDS(on) . . . 0.09 Typ at VGS = 10 V
 3 V Compatible
 Requires No External VCC
 TTL and CMOS Compatible Inputs
 VGS(th) = 1.5 V Max
 Available in Ultrathin TSSOP Package (PW)
 ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015


Pinout

Connection Diagram


Specifications

 
UNIT
Drain-to-source voltage, VDS
15
V
Gate-to-source voltage, VGS
2 or 15
V

Continuous drain current (TJ = 150°C) ID‡
 VGS = 2.7 V D package
TA = 25°C
±0.62
A
TA = 125°C
±0.39
PW package
TA = 25°C
±0.61
TA = 125°C
±0.38
VGS = 3 V D package
TA = 25°C
±0.88
TA = 125°C
±0.47
PW package
TA = 25°C
±0.86
TA= 125°C
±0.45
VGS = 4.5 V D package
TA = 25°C
±1.52
TA = 125°C
±0.71
PW package
TA = 25°C
±1.44
TA = 125°C
±0.67
VGS = 10 V D package
TA = 25°C
±2.30
TA = 125°C
±1.04
PW package
TA= 25°C
±2.18
TA = 125°C
±0.98
Pulsed drain current, ID‡
TA = 25°C
±10
A
Continuous source current (diode conduction), IS
TA = 25°C
1.1
A
Storage temperature range, Tstg
55 to 150
°C
Operating junction temperature range, TJ
40 to 150
°C
Operating free-air temperature range, TA
40 to 125
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C



Description

The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSE process. With a maximum VGS(th) of 1.5 V and an IDSS of only 0.5 mA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage of TPS1101 is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages.




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