MOSFET Single P-Ch Enh-Mode MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 15 V | ||
Gate-Source Breakdown Voltage : | - 15 V, 2 V | Continuous Drain Current : | 2.18 A | ||
Resistance Drain-Source RDS (on) : | 90 mOhms (Typ) | Configuration : | Single Hex Drain Quint Source | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TSSOP-16 | Packaging : | Reel |
Technical/Catalog Information | TPS1101PWR |
Vendor | Texas Instruments |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 15V |
Current - Continuous Drain (Id) @ 25° C | 2.18A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.5A, 10V |
Input Capacitance (Ciss) @ Vds | - |
Power - Max | 710mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 11.25nC @ 10V |
Package / Case | 16-TSSOP |
FET Feature | Logic Level Gate |
Drawing Number | 296; 4040064; PW; 8, 14, 16, 20, 24, 28 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPS1101PWR TPS1101PWR 296 13384 2 ND 296133842ND 296-13384-2 |