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TPS1101DG4

MOSFET Single P-Ch Enh-Mode MOSFET

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SeekIC No. : 00152396 Detail

TPS1101DG4: MOSFET Single P-Ch Enh-Mode MOSFET

TPS1101DG4 Data Sheet

floor Price/Ceiling Price

US $ .89~1.45 / Piece | Get Latest Price
Part Number:
TPS1101DG4
Mfg:
Texas Instruments
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.45
  • $1.22
  • $1.06
  • $.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/1

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 15 V, 2 V Continuous Drain Current : 2.3 A
Resistance Drain-Source RDS (on) : 90 mOhms (Typ) Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 125 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Packaging : Tube    

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 2.3 A
Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 15 V, 2 V
Resistance Drain-Source RDS (on) : 90 mOhms (Typ)


Parameters:

Technical/Catalog InformationTPS1101DG4
VendorTexas Instruments
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs90 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds -
Power - Max791mW
PackagingTube
Gate Charge (Qg) @ Vgs11.25nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Drawing Number296; 4040047-2; D; 8
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPS1101DG4
TPS1101DG4



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