TPS1101DG4, US $ .89-1.45 , Texas Instruments, TPS1101DG4 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00152396 Detail

TPS1101DG4: MOSFET Single P-Ch Enh-Mode MOSFET

TPS1101DG4 Data Sheet

US $ .89~1.45 / Piece | Get Latest Price

Part Number:: TPS1101DG4
Mfg:: Texas Instruments
Supply Ability:: 5000

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$1.22
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US $.67 - .98 / Piece

MOSFET MOSFET 10ns RT

Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	15 V
Gate-Source Breakdown Voltage :	- 15 V, 2 V	Continuous Drain Current :	2.3 A
Resistance Drain-Source RDS (on) :	90 mOhms (Typ)	Configuration :	Single Quad Drain Triple Source
Maximum Operating Temperature :	+ 125 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8	Packaging :	Tube

Description

Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Packaging : Tube
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8
Maximum Operating Temperature : + 125 C
Continuous Drain Current : 2.3 A
Drain-Source Breakdown Voltage : 15 V
Gate-Source Breakdown Voltage : - 15 V, 2 V
Resistance Drain-Source RDS (on) : 90 mOhms (Typ)

Parameters:

Technical/Catalog Information	TPS1101DG4
Vendor	Texas Instruments
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	15V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	90 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	-
Power - Max	791mW
Packaging	Tube
Gate Charge (Qg) @ Vgs	11.25nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	296; 4040047-2; D; 8
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TPS1101DG4 TPS1101DG4

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TPS1101DG4

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