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TPD1038F

Features: • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a singlechip.• One side of load can be grounded to a high-side switch.• Can directly drive a power load from a microprocessor.• Built-in protection against...

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TPD1038F: Features: • A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a singlechip.• One side of load can be grounded to a high-side swit...

TPD1038F Data Sheet

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Part Number:
TPD1038F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• A monolithic power IC with a structure combining a control block (Bi-CMOS) and a vertical power MOS FET on a single
chip.
• One side of load can be grounded to a high-side switch.
• Can directly drive a power load from a microprocessor.
• Built-in protection against overheating and load short-circuiting.
• Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting,opening, or overheating.
• Up to -(50-VDD)~ -(60-VDD) of counterelectromotive force from an L load can be applied.
• Low on-resistance : RDS(ON)=120m(max) ( @ VDD = 12 V,Ta = 25,Io = 2 A)
• 8-pin SOP package for surface mounting that can be packed in tape


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Ratingt
Uni
Drain-source voltage
VDS
60
V
Supply voltage DC
VDD(1)
25
V
Pulsed
VDD(2)
60(RS=1,=250ms)
Input voltage DC
VIN(1)
-0.5~12
V
Pulsed
VIN(2)
VDD(1)+1.5(t=100ms)
Output current
IO
Internally limited
A
Input current
IIN
±10
mA
Diagnosis current
IDIAG
5
mA
Power dissipation
(Note 1-a)
PD(1)
1.1
W
Power dissipation
(Note 1-b)
PD(2)
0.425
W
Operating temperature
Topr
-40~110
Channel temperature
Tch
150
Storage temperature
Tstg
-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




Description

The TPD1038F is a monolithic power IC for high-side switches.

The TPD1038F IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The
device offers intelligent self-protection and diagnostic functions.




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