TPD1033F

A monolithic power IC with a new structure combining a control block (Bi-CMOS) and a vertical power MOS FET (-MOS) on a single chip
One side of load can be grounded to a high-side switch
Can directly drive a power load from a microprocessor.
Built-in protection against thermal shutdown and load short-circuiting.
Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, opening, or overheating.
Up to -10 V of counterelectromotive force from an L load can be applied.
Low on-resistance             : R_ON = 220 m (max)
Low operating current       : I_DD = 1 mA (typ.), (@V_DD = 12 V, V_IN = 0 V)
8-pin SOP package for surface mounting can be packed in tape.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

The TPD1033F is a monolithic power IC for high-side switches. The  TPD1033F IC has a vertical MOS FET output that can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection and diagnostic
functions.