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TPD1032F

Features: • Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or TTL logic.• Built-in protection circuits against overvoltage (active clamp), overtemperature ...

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TPD1032F: Features: • Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or...

TPD1032F Data Sheet

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Part Number:
TPD1032F
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Built-in two power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 µA (max) (@VIN = 0 V, VDS = 30 V, Tch = 25°C)
• Low Input Current: IIN = 300 A (max) (@VIN = 5 V, Tch = 25°C)
• 8-pin SOP package for surface with embossed-tape packing.




Pinout

Connection Diagram


Specifications

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDS (DC)

20

V

Drain current

ID

Internally Limited

A

Input voltage

VIN

-0.3 to 7

V

Power dissipation (t = 10 s)

PD

2.0

(Note3)

W

Operating temperature

Topr

-40 to 110

°C

Channel temperature

Tch

150

°C

Storage temperature

Tstg

-55 to 150

°C

Note3: Drive operation: Mount on glass epoxy boad [1 inch2 × 0.8 t] (in the two devices driving)




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