Features: • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or TTL logic.• Built-in protection circuits against overvoltage (active clamp), overtemperature ...
TPD1030F: Features: • Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on each chip.• Can directly drive a power load from a CMOS or...
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Characteristics |
Symbol |
Rating |
Unit |
Drain-source voltage |
V DS(DC) |
40 |
V |
Drain current |
ID |
Internally Limited |
A |
Input voltage |
VIN |
−0.3 to 7 |
V |
Power dissipation (t = 10 s) |
PD |
2.0 (Note 3) |
W |
Single pulse active clamp capability (Note 4) |
EAS |
10 |
mJ |
Active clamp current |
IAR |
1 |
A |
Repetitive active clamp capability (Note 5) |
EAR |
0.2 |
mJ |
Operating temperature |
Topr |
−40 to 110 |
|
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
−55 to 150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).