Features: • Lead(Pb)-Free• Small mounting area due to small and thin package• Low drain-source ON resistance: P Channel RDS (ON) = 27 m (typ.)• High forward transfer admittance: P Channel |Yfs| = 9.6 S (typ.)• Low leakage current: IDSS = −10 A (VDS = −32 V...
TPCP8J01: Features: • Lead(Pb)-Free• Small mounting area due to small and thin package• Low drain-source ON resistance: P Channel RDS (ON) = 27 m (typ.)• High forward transfer admittan...
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Features: • Small footprint due to a small and thin package• High speed switching̶...
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−32 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
−32 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current |
DC (Note 1) |
ID |
−5.5 |
A |
Pulse (Note 1) |
IDP |
−22 | ||
Drain power dissipation (t = 5 s) (Note 2a) |
PD |
2.14 |
W | |
Drain power dissipation (t = 5 s) (Note 2b) |
PD |
1.06 |
W | |
Single pulse avalanche energy (Note 3) |
EAS |
5.8 |
mJ | |
Avalanche current |
IAR |
-3 |
A | |
Repetitive avalanche energy (Note 4) |
EAR |
0.21 |
mJ |