Application• Lead (Pb)-Free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 7 m (typ.)• High forward transfer admittance:|Yfs| = 36 S (typ.)• Low leakage current: IDSS = 10 A (VDS = 20 V)• Enhancement mode: Vth = 0.5 to...
TPCP8002: Application• Lead (Pb)-Free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 7 m (typ.)• High forward transfer admittance:|Yfs| = 36...
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Features: • Small footprint due to a small and thin package• High speed switching̶...
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
20 |
V | |
Drain?gate voltage (RGS = 20 k) |
VDGR |
20 |
V | |
Gate?source voltage |
VGSS |
±12 |
V | |
Drain current | DC (Note 1) |
ID |
9.1 |
A
|
Pulse (Note 1) |
IDP |
36.4 | ||
Drain power dissipation (t = 5 s) (Note 2a) |
PD |
1.68 |
W | |
Drain power dissipation (t = 5 s) (Note 2b) |
PD |
0.84 | ||
Single pulse avalanche energy (Note 3) |
EAS |
21.5 |
mJ | |
Avalanche current |
IAR |
9.1 |
A | |
Repetitive avalanche energy (Note 4) |
EAR |
0.168 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
TSTG |
-55 ~ 150 |
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)