Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 3.6 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 13 m (typ.)• High forward transfer admittance: |Yfs| = 16 S (typ.)• Low leakage current: IDSS = ...
TPCP8001-H: Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 3.6 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 13 m (ty...
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Characteristic |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
Gate-source voltage |
VGSS |
±20 |
V | |
Drain current | DC (Note 1) |
ID |
7.2 |
A |
Pulsed (Note 1) |
IDP |
28.8 |
A | |
Drain power dissipation (t = 5 s) (Note 2a) |
PD |
1.68 |
W | |
Drain power dissipation (t = 5 s) (Note 2b) |
PD |
0.84 |
W | |
Single-pulse avalanche energy (Note 3) |
EAS |
3.93 |
mJ | |
Avalanche current |
IAR |
2.2 |
A | |
Repetitive avalanche energy (Tc=25) (Note 4) |
EAR |
0.016 |
mJ | |
Channel temperature |
Tch |
150 |
||
Storage temperature range |
Tstg |
−55 to 150 |