Application・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive・High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)・Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) (NPN transistor)・High-speed...
TPCP8H02: Application・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive・High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor)・L...
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Features: • Small footprint due to a small and thin package• High speed switching̶...
Characteristics | Symbol | Rating | Unit | |
Collector-base voltage | VCBO | 50 | V | |
Collector-emitter voltage | VCEX | 50 | V | |
VCEO | 30 | |||
Emitter-base voltage | VEBO | 6 | V | |
Collector current | DC (Note 1) | IC | 3. | A |
Pulse (Note 1) | ICP | 2.0 | ||
Base current | IB | 0.3 | A | |
Collector power dissipation (NPN) | PC (Note 2) | 1.0 | W | |
Junction temperature | Tj | 150 | °C |