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TPCP8H01

Application・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive・High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)・Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor)・High-speed...

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SeekIC No. : 004526233 Detail

TPCP8H01: Application・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive・High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)・L...

TPCP8H01 Data Sheet

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Part Number:
TPCP8H01
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Product Details

Description



Application

・Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
・High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)
・Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max) (NPN transistor)
・High-speed switching: tf = 25 ns (typ.) (NPN transistor)


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 100 V
Collector-emitter voltage VCEX 80 V
VCEO 50
Emitter-base voltage VEBO 6 V
Collector current DC (Note 1) IC 5.0 A
Pulse (Note 1) ICP 7.0
Base current IB 0.5 A
Collector power dissipation (NPN) PC (Note 2) 1.0 W
Junction temperature Tj 150 °C



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