Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor)• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)Specifications SYMBOL PARAMETER CONDIT...
TPCP8F01: Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor)• High-sp...
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Features: • Small footprint due to a small and thin package• High speed switching̶...
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
VCBO |
Collector-base voltage |
-30 |
V | |
VCEO |
Collector-emitter voltage |
-20 |
V | |
VEBO |
Emitter-base voltage |
-7 |
V | |
IC |
Collector current (DC) |
-3.0 |
A | |
ICP |
Collector current |
-5.0 |
A | |
PC |
Collector power dissipation |
Note 1 |
1.0 |
W |
Tj |
Junction temperature |
150 |