TPCP8F01

Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor)• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)Specifications SYMBOL PARAMETER CONDIT...

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SeekIC No. : 004526232 Detail

TPCP8F01: Features: • High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor)• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor)• High-sp...

floor Price/Ceiling Price

Part Number:
TPCP8F01
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Features:

• High DC current gain: hFE = 200 to 500 (IC = −0.5 A) (PNP Transistor)
• Low collector-emitter saturation: VCE (sat) = −0.19 V (max) (PNP Transistor)
• High-speed switching: tf = 40 ns (typ.) (PNP Transistor)



Specifications

SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage  
-30
V
VCEO
Collector-emitter voltage  
-20
V
VEBO
Emitter-base voltage  
-7
V
IC
Collector current (DC)
-3.0
A
ICP
Collector current
-5.0
A
PC
Collector power dissipation
Note 1
1.0
W
Tj
Junction temperature
150



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