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TPCP8901

Features: • Small footprint due to small and thin package• High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A):NPN hFE = 400 to 1000 (IC = 0.1 A)• Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max): NPN VCE (sat) = 0.17 V (max)• High-speed sw...

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TPCP8901: Features: • Small footprint due to small and thin package• High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A):NPN hFE = 400 to 1000 (IC = 0.1 A)• Low collector-emitter...

TPCP8901 Data Sheet

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Part Number:
TPCP8901
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• High DC current gain : PNP hFE = 200 to 500 (IC = −0.1 A)
:NPN hFE = 400 to 1000 (IC = 0.1 A)
• Low collector-emitter saturation : PNP VCE (sat) = −0.20 V (max)
: NPN VCE (sat) = 0.17 V (max)
• High-speed switching : PNP tf = 70 ns (typ.)
: NPN tf = 85 ns (typ.)


Specifications

Characteristics
Symbol
Rating
Unit
PNP
NPN
Collector-base voltage
VCBO
-50
100
V
Collector-emitter voltage
VCEO
-50
50
V
Emitter-base voltage
VEBO
-7
7
V
Collector current DC(Note 1)
IC
-0.8
1.0
A
Pulse(Note 1 )
ICP
-5.0
5.0
A
Base current
IB
-100
100
mA
Collector power
dissipation (t = 10s)		 Single-device
operation
PC(Note2)
1.48
W
Single-device
value at dual
operation
0.80
Collector power
dissipation (DC)		 Single-device
operation
PC(Note2)
0.83
W
Single-device
value at dual
operation
0.48
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150

Note 1: Please use devices on condition that the junction temperature is below 150.Icp=±5A (@ t100s)
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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