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TPCP8602

Features: • High DC current gain: hFE = 200 to 500 (IC = −0.3 A)• Low collector-emitter saturation: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 90 ns (typ.)Specifications Parameter Symbol Ratings Unit Collector-Base Voltage VCBO -50 V Colle...

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TPCP8602: Features: • High DC current gain: hFE = 200 to 500 (IC = −0.3 A)• Low collector-emitter saturation: VCE (sat) = −0.2 V (max)• High-speed switching: tf = 90 ns (typ.)Spe...

TPCP8602 Data Sheet

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Part Number:
TPCP8602
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• High DC current gain: hFE = 200 to 500 (IC = −0.3 A)
• Low collector-emitter saturation: VCE (sat) = −0.2 V (max)
• High-speed switching: tf = 90 ns (typ.)


Specifications

Parameter Symbol Ratings Unit
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -7 V
Collector current DC (Note 1) IC -2.5 mA
Pulse (Note 1 ) ICP -4.0 mA
Base Current IB -0.25 mA
Collector power
dissipation (t = 10s)		 t = 10s PC (Note 2) 3.0 W
DC 1.25
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150

Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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