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Application• High DC current gain: hFE = 120~300 (IC = 0.1 A)• Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)• High-speed switching: tf = 0.2 s (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V ...

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SeekIC No. : 004526227 Detail

TPCP8507: Application• High DC current gain: hFE = 120~300 (IC = 0.1 A)• Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max)• High-speed switching: tf = 0.2 s (typ.)Specificati...

TPCP8507 Data Sheet

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Part Number:: TPCP8507
Supply Ability:: 5000

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Product Details

Description

Application

• High DC current gain: h_FE = 120~300 (I_C= 0.1 A)
• Low collector-emitter saturation voltage: V_CE(sat) = 0.14 V (max)
• High-speed switching: t_f= 0.2 s (typ.)

Specifications

Characteristics		Symbol	Rating	Unit
Collector-base voltage		V_CBO	180	V
Collector-emitter voltage		V_CEX	150	V
Collector-emitter voltage		V_CEO	120	V
Emitter-base voltage		V_EBO	7	V
Collector current	DC(Note1)	I_C	1.0	A
Collector current	Pulse(Note 1)	I_CP	2.0	A
Base current		I_B	0.1	A
Collector power dissipation	t = 10s	P_C (Note 2)	3.00	W
Collector power dissipation	DC	P_C (Note 2)	1.25	W
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

Note 1: Ensure that the channel temperature does not exceed 150 during use of the device.
Note 2: Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area, 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

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