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TPCP8505

Application• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)• Low collector-emitter saturation: VCE (sat) = 0.14 V (max)• High-speed switching: tf = 120 ns (typ.)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V ...

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TPCP8505: Application• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)• Low collector-emitter saturation: VCE (sat) = 0.14 V (max)• High-speed switching: tf = 120 ns (typ.)Specification...

TPCP8505 Data Sheet

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Part Number:
TPCP8505
Supply Ability:
5000

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Product Details

Description



Application

• High DC current gain: hFE = 400 to 1000 (IC = 0.3 A)
• Low collector-emitter saturation: VCE (sat) = 0.14 V (max)
• High-speed switching: tf = 120 ns (typ.)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEX
80
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current(Note1) DC(Note1)
IC
3.0
A
Pulse(Note 1)
ICP
5.0
A
Base current
IB
0.3
mA
Collector power
dissipation (Note 2)		 t = 10s
PC (Note 2)
3.0
mW
DC
1.25
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
 −55 to 150

Note 1: Ensure that the junction temperature does not exceed 150°C during use of this device.
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).




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