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TPCP8504

Features: • High DC current gain : hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation : VCE (sat) = 0.12 V (max)• High-speed switching : tf = 25 ns (typ.)Specifications Parameter Symbol Ratings UNIT Collector-base voltage VCBO 20 V Collector-emitter...

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TPCP8504: Features: • High DC current gain : hFE = 400 to 1000 (IC = 0.2 A)• Low collector-emitter saturation : VCE (sat) = 0.12 V (max)• High-speed switching : tf = 25 ns (typ.)Specificatio...

TPCP8504 Data Sheet

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Part Number:
TPCP8504
Supply Ability:
5000

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Product Details

Description



Features:

• High DC current gain : hFE = 400 to 1000 (IC = 0.2 A)
• Low collector-emitter saturation : VCE (sat) = 0.12 V (max)
• High-speed switching : tf = 25 ns (typ.)


Specifications

Parameter Symbol Ratings UNIT
Collector-base voltage VCBO 20 V
Collector-emitter voltage VCEO 10 V
Emitter-base voltage VEBO 7 V
Collector current DC (Note 1) IC 2.0 A
Pulse (Note 1 ) ICP 3.5 A
Base current IB 0.2 A
Power dissipation at TA=25 (a)
Linear derating factor		 t = 10s PC 2.8 W
DC 1.2
Jumction temperature Tj 150
Storage temperature Tstg 65 to +150
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).


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