TPCP8501

Features:

• High DC current gain : h_FE = 100 to 300 (I_C = 0.3 A)
• Low collector-emitter saturation : V_{CE (sat)} = 0.2 V (max)
• High-speed switching : t_f = 100 ns (typ.)


Pinout




Specifications

Characteristics		Symbol	Rating	Unit
Collector-base voltage		VCBO	180	V
Collector-emitter voltage		VCEX	150	V
		VCEO	100
Emitter-base voltage		VEBO	7	V
Collector current	DC(Note1)	IC	2.0	A
	Pulse (Note1)	ICP	4.0
EBase current		IB	0.2	A
Collector power dissipation(t = 10s)	(t = 10s)	PC (Note2)	3.3	W
	DC		1.3
Junction temperature		Tj	150
Storage temperature		Tstg	−55 to 150

Note 1: Please use devices on condition that the junction temperature is below 150.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
             the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
             even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
             maximum ratings.

             Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
             ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
             report and estimated failure rate, etc).