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TPCP8402

Features: • Low drain-source ON resistance: P Channel RDS (ON) = 60 m (typ.)N Channel RDS (ON) = 38 m (typ.)• High forward transfer admittance: P Channel |Yfs| = 6.0 S (typ.)N Channel |Yfs| = 7.0 S (typ.)• Low leakage current: P Channel IDSS = −10 A (VDS = −30 V)N Cha...

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SeekIC No. : 004526223 Detail

TPCP8402: Features: • Low drain-source ON resistance: P Channel RDS (ON) = 60 m (typ.)N Channel RDS (ON) = 38 m (typ.)• High forward transfer admittance: P Channel |Yfs| = 6.0 S (typ.)N Channel |Y...

TPCP8402 Data Sheet

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Part Number:
TPCP8402
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance
: P Channel RDS (ON) = 60 m (typ.)
N Channel RDS (ON) = 38 m (typ.)
• High forward transfer admittance
: P Channel |Yfs| = 6.0 S (typ.)
N Channel |Yfs| = 7.0 S (typ.)
• Low leakage current
: P Channel IDSS = −10 A (VDS = −30 V)
N Channel IDSS = 10 A (VDS = 30 V)
• Enhancement−mode
: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA)
N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−32
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
−32
30
V
Gate-source voltage
VGSS
±20
±20
V
Drain current
DC (Note 1)
ID
−5.5
4.2
A
Pulse (Note 1)
IDP
−22
16.8
Drain power
dissipation
(t = 5 s)
(Note 2a)
Single-device operation
(Note 3a)
PD (1)
1.48
1.48
W
Single-device value at
dual operation(Note 3b)
PD (2)
1.06
1.23
W
Drain power
dissipation
(t = 5 s)
(Note 2b)
Single-device operation
(Note 3a)
PD (1)
0.58
0.58
W
Single-device value at
dual operation(Note 3b)
PD (2)
0.36
0.36
Single pulse avalanche energy (Note 4)
EAS
0.75
2.86
mJ
Avalanche current
IAR
−1.7
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.12
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.




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