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TPCP8401

Features: • Low drain-source ON resistance: P Channel RDS (ON) = 31 m (typ.) N Channel RDS (ON) = 20 m (typ.)• High forward transfer admittance: P Channel |Yfs| = S (typ.)N Channel |Yfs| = S (typ.)• Low leakage current: P Channel IDSS = −10 A (VDS = −30 V)N Channel ID...

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SeekIC No. : 004526222 Detail

TPCP8401: Features: • Low drain-source ON resistance: P Channel RDS (ON) = 31 m (typ.) N Channel RDS (ON) = 20 m (typ.)• High forward transfer admittance: P Channel |Yfs| = S (typ.)N Channel |Yfs|...

TPCP8401 Data Sheet

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Part Number:
TPCP8401
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: P Channel RDS (ON) = 31 m (typ.)
                                                       N Channel RDS (ON) = 20 m (typ.)
• High forward transfer admittance: P Channel |Yfs| = S (typ.)
                                                         N Channel |Yfs| = S (typ.)
• Low leakage current: P Channel IDSS = −10 A (VDS = −30 V)
                                     N Channel IDSS = 10 A (VDS = 30 V)
• Enhancement-mode
   : P Channel Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
   : N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics

Symbol

Rating

Unit

P Channel N Channel
Drain-source voltage VDSS -30 30 V
Drain-gate voltage (RGS = 20 k) VDGR -30 30 V
Gate-source voltage VGSS ±20 ±20 V
Drain current DC       (Note 1) ID -3.5 4.5 V
Pulse   (Note 1) IDP -14 18
Drain power
dissipation
(t = 10s)
(Note 2a)		 Single-device operation
(Note 3a)		 PD(1) TBD TBD W
Single-device value at
dual operation (Note 3b)		 PD(2) TBD TBD
dissipation
(t = 10s)
(Note 2b)		 Single-device operation
(Note 3a)		 PD(1) TBD TBD
Single-device value at
dual operation (Note 3b)		 PD(2) TBD TBD
Single pulse avalanche energy EAS 2.0
(Note 4a)		 3.3
(Note 4b)		 mJ
Avalanche current IAR -1.75 2.25 A
Repetitive avalanche energy
Single-device value at operation
(Note 2a, 3b, 5)		 EAR TBD mJ
Channel temperature Tch 150  
Storage temperature range Tstg −55~150  
Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page.


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