Position: Home  > All Categories> Integrated Circuits (ICs) > TPCP8302

TPCP8302

Features: • Lead (Pb)-free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancemen...

product image

TPCP8302 Picture
See larger image
SeekIC No. : 004526221 Detail

TPCP8302: Features: • Lead (Pb)-free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)• High forward transfer admittance: |Yfs| = 14...

TPCP8302 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCP8302
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/1/11

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement model: Vth = −0.4 to −1.0V (VDS = −6 V, ID = −1 mA)


Pinout

Connection Diagram


Specifications

Characteristic Symbol Value Units
Drain-source voltage VDSS −20 V
Drain-gate voltage (RGS = 20 k) VDGR −20 V
Gate-source voltage VGSS ±12 V
Continuous Drain Current DC (Note 1) ID -5 A
Pulse (Note 1) IDP -20
Drain power
dissipation
t = 5 s) (Note 2a)		 Single-device operation
(Note 3a)		 PD(1) 1.48 W
Single-device value at
dual operation (Note 3b)		 PD(2) 1.23

Drain power
dissipation
t = 5 s) (Note 2b)

 Single-device operation
(Note 3a)		 PD(1) 0.58
Single-device operation
(Note 3a)		 PD(2) 0.36
Single-pulse avalanche energy (Note 4) EAS 6.5 mJ
Avalanche current IAR -5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.12 mJ
Channel temperature Tch 150
Junction and Storage Temperature Range TJ, TSTG - 55 to +150


Note: For Notes 1 to 6, see the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling  recautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Tools
TCP202
G084SN05 V.3
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Resistors
A101G
3006P-1-205LF
Circuit Protection
A50QS75-4Y
F-17*77
Line Protection, Backups
BX0023
A20B-1008-0550
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more