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TPCP8301

Features: • Lead (Pb)-free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)• Enhancemen...

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SeekIC No. : 004526220 Detail

TPCP8301: Features: • Lead (Pb)-free• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)• High forward transfer admittance: |Yfs| = 14...

TPCP8301 Data Sheet

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Part Number:
TPCP8301
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Lead (Pb)-free
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS(ON) = 25 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2V (VDS = −10 V, ID = −200 A)


Specifications

Characteristic Symbol Rating Unit
Drain-source voltage VDSS −20 V
Drain-gate voltage (RGS = 20 k) VDGR −20 V
Gate-source voltage VGSS ±12 V
Drain current DC (Note 1) ID −5 A
Pulse (Note 1) IDP −20 A
Drain powerdissipation
(t = 5 s) (Note 2a)		 Single-device operation
Drain power (Note 3a)		 PD (1) 1.48 W
Single-device value at
dual operation (Note 3b)		 PD (2) 1.23
Drain powerdissipation
(t = 5 s) (Note 2b)		 Single-device operation(Note 3a) PD (1) 0.58
Single-device value at
dual operation (Note 3b)		 PD (2) 0.36
Single-pulse avalanche energy (Note 4) EAS 6.5 mJ
Avalanche current IAR −5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)		 EAR 0.12 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55 to 150



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