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TPCP8202

Features: • Lead (Pb)-free• Low drain-source ON-resistance: RDS(ON) = 19 m (typ.)• High forward transfer admittance: |Yfs| = 20 S (typ.)• Low leakage current: IDSS = 10 A (max)(VDS = 30 V)• Enhancement model: Vth = 0.7 to 1.4V(VDS = 10 V, ID = 200 A)Specifications ...

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TPCP8202: Features: • Lead (Pb)-free• Low drain-source ON-resistance: RDS(ON) = 19 m (typ.)• High forward transfer admittance: |Yfs| = 20 S (typ.)• Low leakage current: IDSS = 10 A (ma...

TPCP8202 Data Sheet

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Part Number:
TPCP8202
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Lead (Pb)-free
• Low drain-source ON-resistance: RDS(ON) = 19 m (typ.)
• High forward transfer admittance: |Yfs| = 20 S (typ.)
• Low leakage current: IDSS = 10 A (max)(VDS = 30 V)
• Enhancement model: Vth = 0.7 to 1.4V
(VDS = 10 V, ID = 200 A)


Specifications

Characteristic Symbol Value Units
Drain-source voltage VDSS 150 V
Drain-gate voltage (RGS = 20 k) VDGR 150 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID 2.1 A
Pulse (Note 1) IDP 8.4
Drain power
dissipation
(t = 5 s) (Note 2a)		 Single-device operation
(Note 3a)		 PD(1) 1.48 W
Single-device value at
dual operation (Note 3b)		 PD(2) 1.23

Drain power
dissipation
(t = 5 s) (Note 2b)

 Single-device operation
(Note 3a)		 PD(1) 0.58
Single-device value at
dual operation (Note 3b)		 PD(2) 0.36
Single-pulse avalanche energy (Note 4) EAS 7.86 mJ
Avalanche current IAR 5.5 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
 EAR 0.12 mJ
Channel temperature Tch 150
Storage temperature range TSTG - 55 to +150


Note: For Notes 1 to 6, see the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




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