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TPCP8201

Features: • Lead(Pb)-Free• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)• High forward transfer admittance:|Yfs| = 7.0 S (typ.)• Low leakage current: IDSS = 10 A (VDS = 30 V)• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)PinoutSpecifications ...

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TPCP8201: Features: • Lead(Pb)-Free• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)• High forward transfer admittance:|Yfs| = 7.0 S (typ.)• Low leakage current: IDSS = 10 A (VD...

TPCP8201 Data Sheet

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Part Number:
TPCP8201
Supply Ability:
5000

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Product Details

Description



Features:

• Lead(Pb)-Free
• Low drain-source ON resistance: RDS (ON) = 38 m (typ.)
• High forward transfer admittance:|Yfs| = 7.0 S (typ.)
• Low leakage current: IDSS = 10 A (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA)


Pinout

Connection Diagram


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
4.2
A
Pulse (Note 1)
IDP
16.8
A
Drain power
dissipation
(t = 5 s)
(Note 2a)		 Single-device operation
(Note 3a)
PD(1)
1.48
W
Single-device value at
dual operation
(Note 3b)
PD(2)
1.23
Drain power
dissipation
(t = 5 s)
(Note 2b)		 Single-device operation
(Note 3a)
PD(1)
0.58
Single-device value at
dual operation
(Note 3b)
PD(2)
0.36
Single pulse avalanche energy
(Note 4)
EAS
2.86
mJ
Avalanche current
IAR
2.1
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
EAR
0.12
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
-55~150

Note: For Notes 1 to 6, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with caution.




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