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TPCP8102

Application• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.)• High forward transfer admittance: |Yfs| = 24 S (typ.)• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)• Enhancement model: Vth = -0.45 to -1.2 V...

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SeekIC No. : 004526216 Detail

TPCP8102: Application• Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.)• High forward transfer admittance: |Yfs| = 24 S (typ.)• L...

TPCP8102 Data Sheet

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Part Number:
TPCP8102
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 13.5 m (typ.)
• High forward transfer admittance: |Yfs| = 24 S (typ.)
• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)
• Enhancement model: Vth = -0.45 to -1.2 V
(VDS = -10 V, ID = -200 A)


Pinout

Connection Diagram


Specifications

Symbol Characteristic Rating Unit
VDSS Drain-Source Voltage -20 V
VDGR Drain?gate voltage (RGS = 20 k) -20 V
VGSS Gate?source voltage ±12
 V
ID

IDP		 Drain current DC (Note 1) -7.2 A
Pulse (Note 1) -28.8
PD Drain power dissipation (T=25)
(Note 2a)		 1.64 W
PD Drain power dissipation (t = 5 s)
(Note 2b)		 0.84 W
EAS Single-pulse avalanche energy
(Note 3)		 33.7 mJ
IAR Avalanche current -7.2 A
EAR Repetitive avalanche energy (Note 4) 0.168 mJ
Tch Channel temperature 150
Tstg Storage temperature range -55~150


Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




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