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TPCP8101

Features: • Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 24 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)• Enhancement model: Vth = -0.5 to -1.2 V (VD...

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TPCP8101: Features: • Small footprint due to small and thin package• Low drain-source ON-resistance: RDS (ON) = 24 m (typ.)• High forward transfer admittance: |Yfs| = 14 S (typ.)• Low ...

TPCP8101 Data Sheet

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Part Number:
TPCP8101
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 24 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: IDSS = -10 A (max) (VDS = -20 V)
• Enhancement model: Vth = -0.5 to -1.2 V
                                     (VDS = -10 V, ID = -200 A)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 k)
VDGR
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current DC            (Note 1)
ID
-5.6
A
Pulse        (Note 1)
IDP
-22.4
Drain power dissipation                            (t = 5 s)
                                                                 (Note 2a)
PD
1.68
W
Drain power dissipation                            (t = 5 s)
                                                                 (Note 2b)
PD
0.84
W
Single-pulse avalanche energy (Note 3)
EAS
20.3
mJ
Avalanche current
IAR
-5.6
A
Repetitive avalanche energy (Note 4)
EAR
0.168
mJ
Channel temperature
Tch
150
Storage temperature range
TJ, TSTG
-55~150

Note: For Notes 1 to 5, refer to the next page.
          Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within 
          the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
          Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods)
          and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.




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