MOSFET MOSFET NCh 100V 2.2A
TPCP8003-H(TE85L,F: MOSFET MOSFET NCh 100V 2.2A
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Features: • Small footprint due to a small and thin package• High speed switching̶...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.2 A | ||
Resistance Drain-Source RDS (on) : | 0.18 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | PS-8 | Packaging : | Reel |
Technical/Catalog Information | TPCP8003-H(TE85L,F |
Vendor | Toshiba |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 2.2A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.1A, 10V |
Input Capacitance (Ciss) @ Vds | 360pF @ 10V |
Power - Max | 840mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 7.5nC @ 10V |
Package / Case | 2-3V1K |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | TPCP8003 H TE85L,F TPCP8003HTE85L,F |