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TPCP8003-H

Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 7.5 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 130 m (typ.)• High forward transfer admittance: |Yfs| = 5.4 S (typ.)• Low leakage current: IDSS ...

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SeekIC No. : 004526214 Detail

TPCP8003-H: Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 7.5 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 130 m (t...

TPCP8003-H Data Sheet

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Part Number:
TPCP8003-H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
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  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 7.5 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 130 m (typ.)
• High forward transfer admittance: |Yfs| = 5.4 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 100V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
2.2
A
Pulsed (Note 1)
IDP
8.8
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.68
W
Drain power dissipation (t = 5 s)
(Note 2b)
PD
0.84
W
Single-pulse avalanche energy (Note 3)
EAS
3.93
mJ
Avalanche current
IAR
2.2
A
Repetitive avalanche energy (Tc=25) (Note 4)
EAR
0.016
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150

Note: For Notes 1 to 4, refer to the next page.Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.




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